Semiconductor devices comprising a radar semiconductor chip and associated production methods

ABSTRACT

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority to German Patent Application No.102019102784.5 filed on Feb. 5, 2019, the content of which isincorporated by reference herein in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor technology.Also, the disclosure relates to semiconductor devices comprising a radarsemiconductor chip and to methods for producing such semiconductordevices.

BACKGROUND

In radar applications, signal routing and redistribution between chipand antenna may be a critical parameter with regard to theelectromagnetic performance and cost-effectiveness of the application.Radar applications may comprise air-filled hollow waveguides, forexample. Manufacturers of semiconductor devices endeavor to provideimproved semiconductor devices and methods for producing suchsemiconductor devices.

SUMMARY

It may be desirable to provide cost-effective radar semiconductordevices having low performance losses and methods for the productionthereof. Various aspects relate to a semiconductor device. Thesemiconductor device comprises a substrate having a first surface and asecond surface opposite the first surface. The semiconductor devicefurthermore comprises at least one connection element arranged on thefirst surface of the substrate and serving for electrically andmechanically connecting the substrate to a printed circuit board. Thesemiconductor device furthermore comprises a radar semiconductor chiparranged on the first surface of the substrate.

Various aspects relate to a method for producing a semiconductor device.The method comprises arranging at least one connection element on afirst surface of a substrate, wherein the at least one connectionelement is designed to electrically and mechanically connect thesubstrate to a printed circuit board. The method furthermore comprisesarranging a radar semiconductor chip on the first surface of thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Semiconductor devices comprising a radar semiconductor chip andassociated production methods in accordance with the disclosure areexplained in greater detail below with reference to drawings. Theelements shown in the drawings are not necessarily rendered in a mannertrue to scale relative to one another. Identical reference signs maydesignate identical components.

FIG. 1 schematically shows a cross-sectional side view of asemiconductor device 100 in accordance with the disclosure.

FIG. 2 schematically shows a cross-sectional side view of asemiconductor device 200 in accordance with the disclosure.

FIG. 3 schematically shows a cross-sectional side view of asemiconductor device 300 in accordance with the disclosure.

FIG. 4 schematically shows a cross-sectional side view of asemiconductor device 400 in accordance with the disclosure.

FIG. 5 schematically shows a cross-sectional side view of asemiconductor device 500 in accordance with the disclosure.

FIG. 6 schematically shows a cross-sectional side view of asemiconductor device 600 in accordance with the disclosure.

FIG. 7 schematically shows a cross-sectional side view of asemiconductor device 700 in accordance with the disclosure.

FIGS. 8A and 8B schematically show a perspective view and a plan view ofa waveguiding transformer element 800 with an electrical interconnect.

FIG. 9 schematically shows a cross-sectional side view of a multilayeredinjection-molded plastic 900 with an integrated hollow waveguide.

FIG. 10 schematically shows a plan view of a waveguiding transformerelement 1000 such as a semiconductor device in accordance with thedisclosure may contain.

FIG. 11 shows a flow diagram of a method for producing a semiconductordevice in accordance with the disclosure.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which show for illustration purposes concreteaspects and implementations in which the disclosure can be implementedin practice. In this context, direction terms such as, for example, “atthe top”, “at the bottom”, “at the front”, “at the back”, etc. may beused with respect to the orientation of the figures described. Since thecomponents of the implementations described can be positioned indifferent orientations, the direction terms may be used for illustrationpurposes and are not restrictive in any way whatsoever. Other aspectscan be used and structural or logical changes can be made, withoutdeparting from the concept of the present disclosure. That is to saythat the following detailed description should not be understood in arestrictive sense.

FIG. 1 schematically shows a cross-sectional side view of asemiconductor device 100 in accordance with the disclosure. Thesemiconductor device 100 is illustrated in a general way in order todescribe aspects of the disclosure qualitatively. The semiconductordevice 100 can have further aspects, which are not illustrated in FIG. 1for the sake of simplicity. For example, the semiconductor device 100can be extended by any desired aspects described herein in connectionwith other devices in accordance with the disclosure.

The semiconductor device 100 comprises a substrate 2 having a firstsurface 4 and a second surface 6 opposite the first surface 4. Thesemiconductor device 100 furthermore includes at least one connectionelement 8 arranged on the first surface 4 of the substrate 2 and servingfor electrically and mechanically connecting the substrate 2 to aprinted circuit board (not illustrated). Two connection elements 8 areshown in the example in FIG. 1 . In further examples, the number ofconnection elements can deviate and be chosen differently in any desiredmanner. The connection elements 8 can be for example solder contacts inthe form of solder balls or solder deposits. Furthermore, thesemiconductor device 100 includes a radar semiconductor chip (or radarsemiconductor die) 10 arranged on the first surface 4 of the substrate2.

The substrate 2 can be, in particular, a ball grid array (BGA)substrate. Furthermore, the radar semiconductor chip 10 can be connectedto the substrate 2 in particular using flip-chip technology. That is tosay that the radar semiconductor chip 10 can be mounted without furtherconnection wires directly with an active contacting side downward towardthe substrate 2. Connection elements used for the flip-chip contactingare not explicitly illustrated in the example in FIG. 1 . The substrate2 and the radar semiconductor chip 10 can thus form in particular aflip-chip ball grid array (FCBGA).

The substrate 2 can comprise one or a plurality of layers composed of aceramic or dielectric material. Structures for the routing and/orredistribution of electrical signals can be embedded into the layers.These signal routing structures can comprise plated-through holes andconductor tracks. The conductor tracks can be arranged on differentplanes between the ceramic or dielectric layers and can be electricallyconnected to one another by way of plated-through holes runningsubstantially vertically with respect to the layers. In this case, theplated-through holes can extend partly, but not necessarily completely,through the substrate 2. The signal routing structures can be designed,in particular, to electrically couple the radar semiconductor chip 10and the at least one connection element 8. Moreover, the signal routingstructures can be designed very generally to produce electricalconnections between electrical contact pads which can be arranged on thesurfaces 4 and 6 of the substrate 2.

The radar semiconductor chip 10 can contain integrated circuits, passiveelectronic components, active electronic components, etc. The integratedcircuits can be embodied as integrated logic circuits, analog integratedcircuits, integrated mixed signal circuits, integrated power circuits,etc. The radar semiconductor chip 10 can be produced from an elementalsemiconductor material (e.g. Si, etc.) or from a compound semiconductormaterial (e.g. GaN, SiC, SiGe, GaAs, etc.).

The radar semiconductor chip 10 can operate in a radio-frequency ormicrowave frequency range that can generally extend from approximately10 GHz to approximately 300 GHz. By way of example, the radarsemiconductor chip 10 can thus comprise one or a plurality of integratedradio-frequency or microwave circuits that can operate in a frequencyrange of greater than 10 GHz. The microwaves transmitted and/or receivedby the radar semiconductor chip 10 can be millimeter waves, inparticular, the wavelength of which can be in the millimeter range, inparticular between approximately 1 mm and approximately 10 mm, whichcorresponds to a frequency band of approximately 30 GHz to approximately300 GHz. Such microwave circuits can comprise for example microwavetransmitters, microwave receivers, microwave transceivers, microwavesensors, and/or microwave detectors. The devices described herein can beused for radar applications. Radar microwave devices can be used forexample in automotive or industrial applications for distancedetermining/distance measuring systems. By way of example, automaticvehicle speed regulating systems or vehicle anticollision systems canoperate in the microwave frequency range, for example at approximately24 GHz, 77 GHz or 79 GHz.

FIG. 2 schematically shows a cross-sectional side view of asemiconductor device 200 in accordance with the disclosure. Thesemiconductor device 200 in FIG. 2 can be regarded as a more detailedimplementation of the semiconductor device 100 from FIG. 1 . That is tosay that the semiconductor device 100 illustrated in FIG. 1 can beextended by any desired aspects of the semiconductor device 200 in FIG.2 .

The semiconductor device 200 includes an FCBGA 12, which can be mountedon a printed circuit board 14. Furthermore, a waveguide component 16having one or a plurality of waveguides 24 can be mounted on the printedcircuit board 14. The FCBGA 12 can comprise a BGA substrate 2 having afirst surface 4 and an opposite second surface 6. The substrate 2 can bemechanically and electrically connected to the printed circuit board 14by connection elements 8 arranged on the first surface 4. A radarsemiconductor chip 10 can be connected to the substrate 2 by way offurther connection elements 18 using flip-chip technology. Signalrouting structures 20 arranged in the substrate 2 can electricallyconnect the connection elements 8 to the radar semiconductor chip 10.One or a plurality of waveguiding transformer elements 22 can bearranged on the second surface 6 of the substrate 2.

An arrangement of the radar semiconductor chip 10 on the first surface 4of the substrate 2 enables a suitable arrangement of the waveguidingtransformer elements 22 on the opposite second surface 6 of thesubstrate 2. In particular, the arrangement of the radar semiconductorchip 10 in accordance with the present disclosure provides a maximumarea for the arrangement of the waveguiding transformer elements 22 onthe second surface 6 of the substrate 2.

The waveguiding transformer element 22 can be designed to feed orradiate microwave signals originally generated by the radarsemiconductor chip 10 and guided to the waveguiding transformer element22 into the waveguide 24 in a suitable manner. Conversely, thewaveguiding transformer element 22 can furthermore be designed toreceive microwave signals radiated into the waveguide 24 from outsidethe semiconductor device 200, which microwave signals can then be guidedto the radar semiconductor chip 10. In the context described, thewaveguiding transformer element 22 can also be referred to as a“waveguide feed”. A connection between the waveguiding transformerelement 22 and the radar semiconductor chip 10 can be provided forexample at least partly by a coaxial connection running substantiallyvertically.

The waveguiding transformer element 22 can be embodied for example as anantenna in the form of a structured metal layer on the second surface 6of the substrate 2. In this case, such an antenna does not necessarilyradiate uniformly into space, but rather can be designed to feed theelectromagnetic waves generated by the antenna into the waveguide 24 ina suitable manner. One example implementation of such an antennastructure is shown and described in FIG. 10 . In this context, therespective waveguiding transformer element 22 can be arranged on thesecond surface 6 such that the waveguiding transformer element 22 andthe volume of the waveguide 24 arranged thereabove at least partlyoverlap in an orthogonal projection onto the second surface 6 of thesubstrate 2.

The waveguide component 16 can be embodied in an integral fashion orcomprise a plurality of parts. The waveguide component 16 can beproduced from plastic, a ceramic material and/or a dielectric material.In the example in FIG. 2 , the waveguides 24 can be embodied in the formof hollow waveguides having metallized inner walls for microwavetransmission. In further examples, waveguides of semiconductor devicesin accordance with the disclosure can alternatively or additionally beembodied in the form of dielectric waveguides (see FIG. 5 ) orsubstrate-integrated hollow waveguides (see FIG. 6 ). In particular, thewaveguide component 16 can be embodied in a multilayeredinjection-molded plastic and the at least one waveguide 24 can comprisea metallized hollow waveguide embodied in the injection-molded plastic.Only hollow waveguides running vertically through the waveguidecomponent 16 are illustrated in the example in FIG. 2 . In furtherexamples, the waveguide component 16 can comprise any desiredcombination of horizontal and vertical hollow waveguide sectionsconnected to one another. One example implementation of a horizontalhollow waveguide in a multilayered injection-molded plastic is shown anddescribed in FIG. 9 .

In the example in FIG. 2 , the waveguide component 16 can be mounted onthe printed circuit board 14 and be connected thereto. In furtherexamples, the waveguide component 16 can likewise be arranged over theprinted circuit board 14, but need not necessarily touch the latter. Thewaveguide component 16 can extend over the second surface 6 and sidesurfaces of the substrate 2 and thereby at least partly cover orencapsulate the FCBGA 12.

In the example in FIG. 2 , an air gap 26 can be formed between thesecond surface 6 of the substrate 2 and a surface of the waveguidecomponent 16 facing the substrate 2. The air gap can have a height h ofless than or equal to λ/10, wherein λ can correspond to a wavelength ofsignals transmitted in the waveguides 24. The distance h can thuscorrespond to approximately 500 μm, 400 μm, 300 μm, 200 μm, 100 μm, 50μm, 20 μm or be smaller. Mechanical stresses between the waveguidecomponent 16 and the FCBGA 12 that possibly occur during operation ofthe semiconductor device 200 can be prevented or reduced by the air gap26. In the air gap 26, one or a plurality of structures can be arrangedwhich can be designed to reduce crosstalk of microwave signalstransmitted in adjacent waveguides 24 of the waveguide component 16. Inparticular, the structures can be designed to form standingelectromagnetic waves in the air gap 26 between the waveguides 24 andthereby to prevent crosstalk between the waveguides 24. By way ofexample, suitable structures of this type can comprise λ/4 structures,wherein λ can correspond to a wavelength of signals transmitted in thewaveguides 24.

In a further example, the waveguide component 16 can contact the secondsurface 6 of the substrate 2, with the result that an air gap 26 asillustrated in FIG. 2 need not necessarily be formed. Crosstalk ofmicrowave signals transmitted in the adjacent waveguides 24 can bereduced or prevented as a result. In order to reduce mechanical stressesbetween the FCBGA 12 and the waveguide component 16 during operation ofthe semiconductor device 200, for example the coefficients of thermalexpansion of the waveguide component 16 and of the FCBGA 12 can becoordinated with one another.

An encapsulation material 80 can be arranged over the first surface 4 ofthe substrate 2, which encapsulation material 80 can at least partlyembed the radar semiconductor chip 10. The radar semiconductor chip 10can be protected against negative external influences, such as moisture,for example, by the encapsulation material 80. The encapsulationmaterial 80 can include for example at least one from a mold compound, alaminate, an epoxy, a filled epoxy, a glass-fiber-filled epoxy, animide, a thermoplastic, a thermosetting polymer, or a polymer mixture.

FIG. 3 schematically shows a cross-sectional side view of asemiconductor device 300 in accordance with the disclosure. Thesemiconductor device 300 can be similar to the semiconductor device 200from FIG. 2 and comprise at least partly identical components. In FIG. 3, the waveguide component 16 having the hollow waveguides 24 from FIG. 2can be replaced by a dielectric lens 28. Furthermore, the waveguidingtransformer elements 22 aligned with the waveguides 24 in FIG. 2 can bereplaced by one or a plurality of antennas or radar antennas 30 arrangedon the second surface 6 of the substrate 2. The antennas 30 can form anantenna array having a plurality of transmitting and receiving antennas.

The dielectric lens 28 can be designed to focus signals transmitted orreceived by the semiconductor device 300 or the antennas 30. That is tosay that waves emitted into space substantially uniformly by theantennas 30 can be focused into a delimited narrow beam. Conversely,received waves can be focused onto the antennas 30 with the aid of thedielectric lens 28. The shape of the dielectric lens 28 can therefore becoordinated in particular with the arrangement of the antennas 30. Thedielectric lens 28 can be produced by employing a 3D printing method,for example. In this case, the dielectric lens 28 can be produced fromone or more of the following materials: quartz, polyethylene,acrylonitrile-butadiene-styrene plastic,acrylonitrile-butadiene-styrene-M30 plastic.

FIG. 4 schematically shows a cross-sectional side view of asemiconductor device 400 in accordance with the disclosure. Thesemiconductor device 400 can be similar to the semiconductor device 200from FIG. 2 and comprise at least partly identical components. Incontrast to FIG. 2 , the semiconductor device 400 comprises, instead ofthe waveguiding transformer element 22, a waveguide transition element32 integrated into the substrate 2, and an electrical interconnect 34.The waveguide transition element 32 can be designed to feed a radarsignal generated by the radar semiconductor chip 10 into the waveguide24 and vice versa. The electrical interconnect 34 can be designed toelectrically couple the waveguide transition element 32 to the radarsemiconductor chip 10. One example implementation of the waveguidetransition element 32 and of the electrical interconnect 34 is shown anddescribed in FIGS. 8A and 8B.

The waveguide transition element 32 and the electrical interconnect 34can be designed to convert a transverse electromagnetic mode (TEM mode)of the microwave transmission line that forms the electricalinterconnect 34 into a transverse electrical mode (TE mode) of thewaveguide 24. As already described above, the waveguide 24 can bealigned with the waveguide transition element 32 in order to provide aneffective coupling of a waveguide signal to the waveguide 24. If thewaveguide transition element 32 operates as a transmitter, it can forexample also be referred to as a launcher, for example a TE₀₁ launcher,if it is used to feed the TE₁₀ mode into the waveguide 24.

The waveguide transition element 32 can be partly or completely embeddedinto the substrate 2. In one example, the waveguide transition element32 can be a prefabricated insert that has been embedded into thesubstrate 2. In a further example, the waveguide transition element 32can be produced directly in the substrate 2 after the substrate 2 hasbeen formed. The waveguide transition element 32 can comprise at leastone electrically conductive wall structure. In the example in FIG. 4 ,the electrically conductive wall structure can be an “open structure”comprising at least one metallized via hole 60, for example, which canbe embodied either directly in the substrate 2 or in an insert. If thewaveguide 24 is embodied as a hollow waveguide, the metallized via holes60 can be regarded as a continuation of the hollow waveguide into thesubstrate 2. By way of example, the via holes 60 can be produced intothe substrate 2 using laser drilling, and a metallization of the innerwalls of the via holes 60 can be produced using conductive paste ormetal plating, for example. In a further example, the electricallyconductive wall structure can comprise for example a metal lining on awall of such an insert. In this case, the electrically conductive wallstructure can be configured as a grid or network of conductive stripsembodied on the side walls of the insert. Furthermore, the conductivewall structure can be embodied as a continuous metal lining on the sidewalls of the insert.

The electrical interconnect 34 can be partly or completely embedded intothe substrate 2. In one example, the electrical interconnect 34 can beembodied as or comprise a hollow waveguide integrated into the substrate2. In a further example, the electrical interconnect 34 can be embodiedas or comprise an electrical redistribution layer, which can bepositioned at a lower surface of the substrate 2. One suitableredistribution layer is shown and described in FIGS. 8A and 8B.

FIG. 5 schematically shows a cross-sectional side view of asemiconductor device 500 in accordance with the disclosure. Thesemiconductor device 500 can be similar to the semiconductor device 200from FIG. 2 and comprise at least partly identical components. In FIG. 5, the waveguide component 16 having the hollow waveguides 24 from FIG. 2can be replaced by one or a plurality of dielectric waveguides 36. Eachof the dielectric waveguides 36 can be arranged above a waveguidingtransformer element 22 and aligned therewith. The dielectric waveguides36 can be produced for example from plastic materials, in particularfrom polypropylene, polystyrene and/or polyethylene.

FIG. 6 schematically shows a cross-sectional side view of asemiconductor device 600 in accordance with the disclosure. Thesemiconductor device 600 can be similar to the semiconductor device 200from FIG. 2 and comprise at least partly identical components. In FIG. 6, the waveguide component 16 having the hollow waveguides 24 from FIG. 2can be replaced by a substrate-integrated hollow waveguide 38. Thesubstrate-integrated hollow waveguide 38 can comprise a dielectricsubstrate 40, which can be coated with an electrically conductivematerial 42, for example a metal, on its top side and underside. Theelectrically conductive material 42 can be electrically connected by wayof electrical plated-through holes 44 running through the dielectricsubstrate 40. The properties of the substrate-integrated hollowwaveguide 38 with regard to its waveguiding functionality are comparablewith those of a rectangular waveguide.

FIG. 7 schematically shows a cross-sectional side view of asemiconductor device 700 in accordance with the disclosure. Thesemiconductor device 700 can be similar to the semiconductor device 200from FIG. 2 and comprise at least partly identical components. Inaddition, the semiconductor device 700 can comprise a heat conductingelement 46 arranged between the radar semiconductor chip 10 and theprinted circuit board 14. In particular, in this case, the heatconducting element 46 can contact the underside of the radarsemiconductor chip 10 and/or the top side of the printed circuit board14. The heat conducting element 46 can be designed to reduce a thermalresistance between the radar semiconductor chip 10 and the printedcircuit board 14, such that heat generated by the radar semiconductorchip 10 during operation of the semiconductor device 700 can bedissipated in an improved manner. For this purpose, the printed circuitboard 14 can additionally be connected to a heat sink (not illustrated).The heat conducting element 46 can be embodied for example by athermally conductive paste or a thermally conductive pad.

FIGS. 8A and 8B illustrate one example waveguiding transformer element800, which can be used for example in the semiconductor device 400 inFIG. 4 . The waveguiding transformer element 800 can be fed for exampleby a coplanar microwave transmission line (CTL) 48. The CTL 48 cancomprise a central conductor 50 and a pair of return conductors 52,which can be arranged on both sides of the central conductor 50. The CTL48 can be embodied for example in a redistribution layer of thesubstrate 2, which layer can be arranged for example on an underside ofthe substrate 2.

The CTL 48 shown in FIGS. 8A and 8B can represent one example of theelectrical interconnect 34 from FIG. 4 or at least one part thereof. Ina further example, the electrical interconnect can be embodied bymicrostrip transmission lines embodied in two different metal layers ofa redistribution layer. The waveguiding transformer element 800 cancomprise a tapering line structure 54 for a mode transformation. Thetapering line structure 54 can be connected to the central conductor 50and can be embodied as a structured metal layer.

The structured metal layer can form a baseplate of the waveguidingtransformer element 800, which at least partly covers the interior ofthe element. A remaining section of the interior of the waveguidingtransformer element 800 can be embodied as an opening 56 in thebaseplate. The baseplate with the tapering line structure 54 canfurthermore have a framelike structure 58, which can define the sidewalls of the waveguiding transformer element 800. The electricallyconductive side walls can be realized by one or more series ofmetallized via holes 60. In other examples, the electrically conductiveside walls of the waveguiding transformer element 800 can be realized byone or more series of conductive slots or by way of side walls having acontinuous metal lining.

The rear-side metal lining, that is to say for example the tapering linestructure 54, the framelike structure 58 and the opening 56 can beembodied in each case within a metal layer of a redistribution layer. Itshould be noted that the tapering line structure 54 is merely onepossibility for conversion of a TEM mode into a TE mode or vice versa.Other possibilities are likewise realizable, such as, for example, asingle contact hole arranged in the inner side of the waveguidingtransformer element 800 and connected to the central conductor 50 forthe excitation of the TE waveguide mode.

FIG. 9 schematically shows a cross-sectional side view of a multilayeredinjection-molded plastic 900 with an integrated hollow waveguide. By wayof example, the waveguide component 16 from FIG. 2 can be embodied by asimilar injection-molded plastic. The injection-molded plastic 900 cancomprise a first layer arrangement 62 and a second layer arrangement 64.Each of the layer arrangements 62 and 64 can comprise one or a pluralityof layers, for example layers composed of a ceramic and/or dielectricmaterial. The first layer arrangement 62 can have a cutout 66 runninghorizontally, while the second layer arrangement 64 can have throughholes 68 running vertically through the second layer arrangement 64. Thelayer arrangements 62 and 64 can be aligned with one another such thatthe cutout 66 and the through holes 68 form a channel runningcontinuously through the layer arrangements 62 and 64. The inner wallsof this channel can be covered by a metallization 70 throughout. Thechannel with its metallized inner walls can thus form a hollow waveguidethrough the layer arrangements 62 and 64.

FIG. 9 is intended to illustrate by way of example a substantiallyhorizontal course of a hollow waveguide through a multilayeredinjection-molded plastic 900. Only part of the injection-molded plastic900 is illustrated here. The injection-molded plastic 900 can compriseany desired number of further layer arrangements, which can bestructured and arranged one above another such that one or a pluralityof hollow waveguides having any desired combination of horizontal andvertical sections can extend through the injection-molded plastic 900.Any desired course of the hollow waveguide(s) through theinjection-molded plastic 900 can be realized using a suitablecombination of horizontal and vertical sections.

FIG. 10 schematically shows a plan view of a waveguiding transformerelement 1000 such as a semiconductor device in accordance with thedisclosure can contain. By way of example, the waveguiding transformerelement 22 in FIG. 2 can be embodied in the form of a similarwaveguiding transformer element. As already described in FIG. 2 , thewaveguiding transformer element 1000 can be arranged on a substrate 2.The waveguiding transformer element 1000 can comprise a patch antenna72, which can be surrounded by a ground structure 74. The patch antenna72 can be embodied by a rectangular metal surface, for example, and theground structure 74 can extend around the patch antenna 72 in arectangular frame shape. The arrangement shown in FIG. 10 can bedesigned for example to radiate microwave signals originally generatedby a radar semiconductor chip 10 and guided to the waveguidingtransformer element 22 into a waveguide in a suitable manner.

FIG. 11 shows a flow diagram of a method for producing a semiconductordevice in accordance with the disclosure. For example, the semiconductordevice 100 from FIG. 1 can be produced by the method. The steps of themethod can be carried out, insofar as is technically practical, in anydesired order successively or at least partly simultaneously. At 76, atleast one connection element is arranged on a first surface of asubstrate. The at least one connection element is designed toelectrically and mechanically connect the substrate to a printed circuitboard. At 78, a radar semiconductor chip is arranged on the firstsurface of the substrate.

EXAMPLES

Semiconductor devices comprising a radar semiconductor chip andassociated production methods are explained below on the basis ofexamples.

Example 1 is a semiconductor device, comprising: a substrate having afirst surface and a second surface opposite the first surface; at leastone connection element arranged on the first surface of the substrateand serving for electrically and mechanically connecting the substrateto a printed circuit board; and a radar semiconductor chip arranged onthe first surface of the substrate.

Example 2 is a semiconductor device according to example 1, furthermorecomprising: at least one radar antenna arranged on the second surface ofthe substrate, or a waveguiding transformer element arranged on thesecond surface of the substrate.

Example 3 is a semiconductor device according to example 1 or 2,furthermore comprising: a waveguide transition element integrated intothe substrate, wherein the waveguide transition element is designed tofeed a radar signal generated by the radar semiconductor chip into aradar waveguide; and an electrical interconnect designed to electricallycouple the waveguide transition element to the radar semiconductor chip.

Example 4 is a semiconductor device according to example 3, wherein thewaveguide transition element comprises at least one metallized via hole.

Example 5 is a semiconductor device according to example 3 or 4, whereinthe electrical interconnect comprises a hollow waveguide integrated intothe substrate.

Example 6 is a semiconductor device according to any of examples 3 to 5,wherein the electrical interconnect comprises an electricalredistribution layer of the substrate.

Example 7 is a semiconductor device according to any of the precedingexamples, furthermore comprising: a waveguide component arranged overthe second surface of the substrate, wherein the waveguide componentcomprises at least one waveguide.

Example 8 is a semiconductor device according to example 7, wherein thewaveguide component extends over the second surface and side surfaces ofthe substrate.

Example 9 is a semiconductor device according to example 7 or 8, whereinthe waveguide component is embodied in a multilayered injection-moldedplastic and the at least one waveguide comprises a metallized hollowwaveguide embodied in the injection-molded plastic.

Example 10 is a semiconductor device according to any of examples 7 to9, wherein the at least one waveguide comprises at least one or morefrom a group consisting of an air-filled hollow waveguide, a dielectricwaveguide, and a substrate-integrated hollow waveguide.

Example 11 is a semiconductor device according to any of examples 7 to10, wherein the volume of the at least one waveguide and the radarantenna or the volume of the at least one waveguide and the waveguidingtransformer element at least partly overlap in an orthogonal projectiononto the second surface of the substrate.

Example 12 is a semiconductor device according to any of examples 7 to11, furthermore comprising: an air gap embodied between the secondsurface of the substrate and a surface of the waveguide component facingthe substrate.

Example 13 is a semiconductor device according to example 12,furthermore comprising: at least one structure arranged in the air gapand designed to reduce crosstalk of signals transmitted in adjacentwaveguides of the waveguide component.

Example 14 is a semiconductor device according to any of the precedingexamples, furthermore comprising: a dielectric lens arranged over thesecond surface of the substrate and designed to focus signalstransmitted or received by the semiconductor device.

Example 15 is a semiconductor device according to any of the precedingexamples, wherein the substrate comprises: at least one layer composedof a ceramic or dielectric material; and signal routing structureshaving plated-through holes and conductor tracks, the signal routingstructures being embedded into the at least one layer, wherein thesignal routing structures are designed to electrically couple the radarsemiconductor chip and the at least one connection element.

Example 16 is a semiconductor device according to any of the precedingexamples, furthermore comprising: a heat conducting element arrangedbetween the radar semiconductor chip and the printed circuit board.

Example 17 is a semiconductor device according to any of the precedingexamples, furthermore comprising: an encapsulation material arrangedover the first surface of the substrate, wherein the radar semiconductorchip is at least partly embedded into the encapsulation material.

Example 18 is a semiconductor device according to any of the precedingexamples, wherein the substrate forms a ball grid array substrate, andthe radar semiconductor chip is connected to the substrate usingflip-chip technology, such that the substrate and the radarsemiconductor chip form a flip-chip ball grid array.

Example 19 is a method for producing a semiconductor device, wherein themethod comprises: arranging at least one connection element on a firstsurface of a substrate, wherein the at least one connection element isdesigned to electrically and mechanically connect the substrate to aprinted circuit board; and arranging a radar semiconductor chip on thefirst surface of the substrate.

Example 20 is a method according to example 19, furthermore comprising:arranging a waveguide component over a second surface of the substrate,wherein the waveguide component comprises at least one waveguide.

Within the meaning of the present description, the terms “connected”,“coupled”, “electrically connected” and/or “electrically coupled” neednot necessarily mean that components must be directly connected orcoupled to one another. Intervening components can be present betweenthe “connected”, “coupled”, “electrically connected” or “electricallycoupled” components.

Furthermore, the word “over” used for example with respect to a materiallayer that is formed “over” a surface of an object or is situated “over”the surface can be used in the present description in the sense that thematerial layer is arranged (for example formed, deposited, etc.)“directly on”, for example in direct contact with, the surface meant.The word “over” used for example with respect to a material layer thatis formed or arranged “over” a surface can also be used in the presenttext in the sense that the material layer is arranged (e.g. formed,deposited, etc.) “indirectly on” the surface meant, wherein for exampleone or more additional layers are situated between the surface meant andthe material layer.

Insofar as the terms “have”, “contain”, “encompass”, “with” or variantsthereof are used either in the detailed description or in the claims,these terms are intended to be inclusive in a similar manner to the term“comprise”. That means that within the meaning of the presentdescription the terms “have”, “contain”, “encompass”, “with”, “comprise”and the like are open terms which indicate the presence of statedelements or features but do not exclude further elements or features.The articles “a/an” or “the” should be understood such that they includethe plural meaning and also the singular meaning, unless the contextclearly suggests a different understanding.

Furthermore, the word “exemplary” is used in the present text in thesense that it serves as an example, a case or an illustration. An aspector a design that is described as “exemplary” in the present text shouldnot necessarily be understood in the sense as though it has advantagesover other aspects or designs. Rather, the use of the word “exemplary”is intended to present concepts in a concrete manner. Within the meaningof this application, the term “or” does not mean an exclusive “or”, butrather an inclusive “or”. That is to say that, unless indicatedotherwise or unless a different interpretation is allowed by thecontext, “X uses A or B” means each of the natural inclusivepermutations. That is to say if X uses A, X uses B or X uses both A andB, then “X uses A or B” is fulfilled in each of the cases mentionedabove. Moreover, the articles “a/an” can be interpreted within themeaning of this application and the accompanying claims generally as“one or more”, unless it is expressly stated or clearly evident from thecontext that only a singular is meant. Furthermore, at least one from Aand B or the like generally means A or B or both A and B.

Devices and methods for producing devices are described in the presentdescription. Observations made in connection with a device described canalso apply to a corresponding method, and vice versa. If a specificcomponent of a device is described, for example, then a correspondingmethod for producing the device can contain an action for providing thecomponent in a suitable manner, even if such an action is not explicitlydescribed or illustrated in the figures. Moreover, the features of thevarious example aspects described in the present text can be combinedwith one another, unless expressly noted otherwise.

Although the disclosure has been shown and described with respect to oneor more implementations, equivalent alterations and modifications basedat least in part on the reading and understanding of this descriptionand the accompanying drawings will be apparent to the person skilled inthe art. The disclosure includes all such modifications and alterationsand is restricted solely by the concept of the following claims.Especially with respect to the various functions that are implemented bythe above-described components (for example elements, resources, etc.),the intention is that, unless indicated otherwise, the terms used fordescribing such components correspond to any components which implementthe specified function of the described component (which is functionallyequivalent, for example), even if it is not structurally equivalent tothe disclosed structure which implements the function of the exampleimplementations of the disclosure as presented herein. Furthermore, evenif a specific feature of the disclosure has been disclosed with respectto only one of various implementations, such a feature can be combinedwith one or more other features of the other implementations in a mannersuch as is desired and advantageous for a given or specific application.

What is claimed is:
 1. A semiconductor device, comprising: a substratehaving a first surface and a second surface opposite the first surface;at least one connection element arranged on the first surface of thesubstrate to electrically and mechanically connect the substrate to aprinted circuit board; a radar semiconductor chip arranged on the firstsurface of the substrate; and at least one of: a waveguiding transformerelement comprising a first surface and a second surface, wherein thefirst surface of the waveguiding transformer element resides above thefirst surface of the substrate, and wherein the second surface of thewaveguiding transformer element is embedded into the substrate, a radarantenna at least partially embedded into the substrate, or a waveguidetransition element embedded into the substrate, wherein the firstsurface of the substrate exposes a first end of the waveguidingtransformer element, wherein the second surface of the substrate exposesa second end of the waveguiding transformer element.
 2. Thesemiconductor device as claimed in claim 1, further comprising: theradar antenna at least partially embedded into the substrate.
 3. Thesemiconductor device as claimed in claim 1, wherein the waveguidetransition element is designed to feed a radar signal generated by theradar semiconductor chip into a radar waveguide and the semiconductordevice further comprising: an electrical interconnect designed toelectrically couple the waveguide transition element to the radarsemiconductor chip.
 4. The semiconductor device as claimed in claim 1,wherein the waveguide transition element comprises at least onemetallized via hole.
 5. The semiconductor device as claimed in claim 3,wherein the electrical interconnect comprises a hollow waveguideintegrated into the substrate.
 6. The semiconductor device as claimed inclaim 3, wherein the electrical interconnect comprises an electricalredistribution layer of the substrate.
 7. The semiconductor device asclaimed in claim 1, further comprising: a waveguide component arrangedover the second surface of the substrate, wherein the waveguidecomponent comprises at least one waveguide.
 8. The semiconductor deviceas claimed in claim 7, wherein the waveguide component extends over thesecond surface of the substrate and side surfaces of the substrate. 9.The semiconductor device as claimed in claim 7, wherein the waveguidecomponent is embodied in a multilayered injection-molded plastic and theat least one waveguide comprises a metallized hollow waveguide embodiedin the injection-molded plastic.
 10. The semiconductor device as claimedin claim 7, wherein the at least one waveguide comprises at least one ormore from a group consisting of an air-filled hollow waveguide, adielectric waveguide, and a substrate-integrated hollow waveguide. 11.The semiconductor device as claimed in claim 1, wherein the waveguidingtransformer element comprises at least one waveguide, wherein a volumeof the at least one waveguide and the radar antenna or a volume of theat least one waveguide and the waveguiding transformer element at leastpartly overlap in an orthogonal projection onto the second surface ofthe substrate.
 12. The semiconductor device as claimed in claim 7,further comprising: an air gap embodied between the second surface ofthe substrate and a surface of the waveguide component facing thesubstrate.
 13. The semiconductor device as claimed in claim 12, furthercomprising: at least one structure arranged in the air gap and designedto reduce crosstalk of signals transmitted in adjacent waveguides of thewaveguide component.
 14. The semiconductor device as claimed in claim 1,further comprising: a dielectric lens arranged over the second surfaceof the substrate and designed to focus signals transmitted or receivedby the semiconductor device.
 15. The semiconductor device as claimed inclaim 1, wherein the substrate comprises: at least one layer composed ofa ceramic or dielectric material; and signal routing structures havingplated-through holes and conductor tracks, the signal routing structuresbeing embedded into the at least one layer, wherein the signal routingstructures are designed to electrically couple the radar semiconductorchip and the at least one connection element.
 16. The semiconductordevice as claimed in claim 1, further comprising: a heat conductingelement arranged between the radar semiconductor chip and the printedcircuit board.
 17. The semiconductor device as claimed in claim 1,further comprising: an encapsulation material arranged over the firstsurface of the substrate, wherein the radar semiconductor chip is atleast partly embedded into the encapsulation material.
 18. Thesemiconductor device as claimed in claim 1, wherein the substrate formsa ball grid array substrate, and the radar semiconductor chip isconnected to the substrate using flip-chip technology, such that thesubstrate and the radar semiconductor chip form a flip-chip ball gridarray.
 19. A method for producing a semiconductor device, wherein themethod comprises: arranging at least one connection element on a firstsurface of a substrate, wherein the at least one connection element isdesigned to electrically and mechanically connect the substrate to aprinted circuit board; embedding a portion of a waveguiding transformerelement into the substrate, wherein a first surface of the waveguidingtransformer element resides above the first surface of the substrate,and wherein a second surface of the waveguiding transformer element isembedded into the substrate; and arranging a radar semiconductor chip onthe first surface of the substrate, wherein the first surface of thesubstrate exposes a first end of the waveguiding transformer element,and wherein a second surface of the substrate, opposite of the firstsurface, exposes a second end of the waveguiding transformer element.20. The method as claimed in claim 19, further comprising: arranging awaveguide component over the second surface of the substrate, whereinthe waveguide component comprises at least one waveguide.